| 摘要 |
PURPOSE:To manufacture the semiconductor circuit wiring body, which has small junction capacitance and hardly has an effect on wave-forms, by forming one conduction type single second region into a reverse conduction type first region formed into one conduction type epitaxial layer, bringing the first region to the state of floating and connecting the second region to a circuit wiring conductor. CONSTITUTION:Coupling by junction capacitance Co between each N type layer 3, 3 seen in conventional devices can be avoided by forming a single N type layer 3 into a P type layer 2. The junction capacitance of cross wiring corresponds to the series connection of capacitance between the N type layer 3 and said P type layer 2 and capacitance between the P type layer 2 and an N type epitaxial layer 1 by bringing the P type layer 2 to the state of floating. However, the N type epitaxial layer 1 displays ground potential. Accordingly, junction capacitance formed to cross wiring is made smaller than the case only of C1 in the case when the P type layer 2 is biased to ground potential. |
