| 摘要 |
PURPOSE:To obtain the titled transistor that withstands a high temperature treatment when a GaAs MESFET which is mechanically and electrically stabilized by a method wherein a gate electrode is made of an alloy of Pt or Pd and As. CONSTITUTION:An Si<+> ion is implanted to a semiinsulating GaAs crystal 31 through a mask 32, and an active layer 23 is selectively formed as shown in the diagram (a) by performing an annealing. Subsequently, a PtAsx(X=1-2) alloy of 5,000Angstrom is sputtered as shown in the diagram (b) as a gate metal 34. Then, an Si<+> ion is implanted again using said gate metal 34 as a mask. An annealing is performed again on this sample, a source and drain high density region 35 is activated as shown in the diagram (c), and the source and drain electrode 36 of AuGe is formed as shown in the diagram (d). As a result, a self-alignment type GaAs MESFET having the series resistance, which is one fifth of that of the FET heretofore in use, can be obtained. |
