| 摘要 |
PURPOSE:To obtain a radiosensitive resist material suitable for forming minute patterns of a semiconductor, optical parts, magnetic bubble elements, etc., by reacting naphthol with a prescribed poly-lower-alkyl methacrylate, and chloromethylating it. CONSTITUTION:A living polymer of a lower acryl methacrylate is reacted with naphthol, and then, the product is reacted with a chloroethyl lower alkyl ether to produce a radioactive resist material contg. a polymer represented by the formula in which (l) is a positive integer, (m) is 0 or a positive integer, and (p) is 1-7. This material can form a minute pattern of a polymer film high in radiosensitivity, resolution, and dry etching resistance, and usable for manufacture of elements of a semiconductor and magnetic bubbles, and optical article parts. |
