| 发明名称 |
SEMICONDUCTOR LASER HAVING BROADBAND LASER GAIN |
| 摘要 |
<p>SEMICONDUCTOR LASER HAVING BROADBAND LASER GAIN Broadband laser gain is obtained in semiconductor materials by pumping an ultra-short laser cavity with picosecond excitation pulses. The broadband laser gain is used to provide picosecond laser radiation energy covering a wide spectrum of frequencies.</p> |
| 申请公布号 |
CA1152619(A) |
申请公布日期 |
1983.08.23 |
| 申请号 |
CA19820395051 |
申请日期 |
1982.01.27 |
| 申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
DAMEN, THEODOOR C.;DUGUAY, MICHEL A.;STONE, JULIAN |
| 分类号 |
H01S5/04;H01S5/10;H01S5/183;H01S5/30;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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