| 摘要 |
PURPOSE:To decrease the number of the work of mask alignment, and to improve accuracy by forming a standard mask for succeeding positioning through the selective etching of a pattern section for positioning. CONSTITUTION:The ions of indium (In) as an N type impurity are implanted into a substrate from the direction of the arrow E while using a photo-resist film 13A bored on a SiO film 12 as a mask, an N type region 15 is formed into the substrate, and a predetermined P-N junction 16 is formed. The photo-resist film 13A is bored for forming an alignment mask at the end section of the substrate, and the impurity is also introduced from the section. The substrate is etched by an etching liquid of HBr while using the photo-resist film 13A as a mask, and the peripheral section of the substrate is grooved to form the reference mark 17 of a convex pattern as an alignment mark. A mask 19 for forming a hole for connection is mask-aligned with the substrate so that the reference mark 17 of the convex pattern and the reference position of the mask agree to each other. |
