| 摘要 |
<p>PURPOSE:To make the operation high-speed and reduce the power consumption, by terminating the discharge period at the detection timing for read-out 0 data in an MOS ROM. CONSTITUTION:In case of read-out of 0 data, the potential of a data read-out line 2 starts falling, and simultaneously, the potential of a data read-out line 12 starts falling also. A sense circuit 1 discriminates 0 data by the fall of the potential of the data read-out line 2 from a level VDD to a level VS and leads out 0 data to the output, and simultaneously, a sense circuit 13 leads out the L level to the output by the fall of the potential of the data read-out line 12. When the L level is outputted from the sense circuit 13, the output of an AND circuit 14 becomes L-level, and the output (a control signal phiP1) of a delay circuit 15 becomes L-level after delayed by quantity tP1, and therefore, an N- channel MOS FET QdD for discharge becomes non-conductive to terminate the discharge period.</p> |
