DEVICE FOR VAPOR DEPOSITION

摘要

PURPOSE:To form a vapor phase epitaxially grown layer of the crystal of a compd. semiconductor in a short time in the vapor deposition stage of the crystal of the compd. semiconductor on the surface of a substrate in a furnace core tube by heating the substrate and reacting gases in the furnace core tube. CONSTITUTION:A crystal substrate 9 of a compd. InP is placed on a susceptor 8 made of SiC-coated graphite on a boat 7 in a furnace core tube 1. A hood 14 is provided so as to cover the substrate 9. Gaseous triethyl indium is supplied from the outside through a conduit 13 into the core tube, and gaseous PH3, AsH3 are supplied therein through a conduit 15 so that the thin film of the crystal of a compd. semiconductor of InP is vapor-deposited epitaxially on the surface of the substrate 9. A susceptor 8 is heated with a high-frequency induction heater 17 to heat the substrate 9 thereon. Similarly, heating blocks 16 made of SiC-coated graphite are heated to heat gases such as PH3 and AsH passing therethrough, whereby the rate of the vapor phase epitaxial growth is improved.