发明名称 THIN FILM TYPE SOLID-STATE X-RAY SENSOR
摘要 PURPOSE:To obtain a vivid image, by constituting an X-ray detecting layer with transparent electric charge transporting materials where phosphor particles and photoconductor particles are dispersed. CONSTITUTION:An X-ray sensor consists of a light intercepting and insulating supporting material 1, a lower electrode 2 which is divided and formed on the supporting material 1, an X-ray detecting layer 3 which is formed so as to cover divided lower electrodes 2, and a light intercepting upper electrode 4. In the X-ray detecting layer 3, photoconductor particles 3a consisting of a hydrogen doped n type amorphous silicon, a p type amorphous silicon doped with elements belonging the third group of the periodic system, photoconductive particles 3a consisting of Se, Se-Te-As, ZnO, CdS, or the like and phosphor particles 3b consisting of Gd2O2S:Tb, (ZnCd)SiAg, ZnS:Ag, or the like are dispersed in a transparent organic electric charge transporting material 3c.
申请公布号 JPS58137781(A) 申请公布日期 1983.08.16
申请号 JP19820019752 申请日期 1982.02.12
申请人 FUJI XEROX KK 发明人 FUSE MARIO;TAKENOUCHI MUTSUO
分类号 G01N23/04;A61B6/00;G01T1/20;H01L31/09;H04N5/32 主分类号 G01N23/04
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