| 摘要 |
A process is provided for fabricating a semiconductor device by thermal gradient zone melting, whereby metal-rich droplets such as aluminum migrate through a semiconductor wafer such as silicon to create conductive paths. One surface of the wafer in provided with a buffer layer thereon, which is placed directly on a heating surface. The buffer layer terminates the migration of the droplets to prevent alloying of the droplets with the heating surface.
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