| 摘要 |
PURPOSE:To reduce the stepwise difference by a coating method without decreasing the characteristic as a protection film and thus improve the reliability of a formed wiring by a method wherein the second Si oxide film is formed on the first Si oxide film, and solutuion wherein an Si compound is contained as the main constitutent is coated and calcined resulting in the formation of an Si oxide film. CONSTITUTION:A poly Si gate electrode 2 is formed on the surface of a semiconductor substrate 1 whereon the functional part of a semiconductor element is formed via an oxide film, and a PSG film 3 is formed thereon by a vapor growing method. Next, the semiconductor element whereon a PSG film is formed is heat-treated at a high temperature, and thus the second PSG or Si oxide film is formed. The second PSG film 6 which is formed is not heat-treated at a high temperature by a steam, but the third Si oxide film 4 is formed thereon. Next, an A wiring 7 is formed on the third Si oxide film 4 which is formed. |
