| 摘要 |
PURPOSE:To improve the efficiency of assembly work by forming an electrode onto a grown layer in shape that is thick and is extended on both sides while dividing a chip through mesa etching and cleavage. CONSTITUTION:The grown layer 22, a diffusion preventive insulating film 23 and stripes 24 are formed onto a GaAs substrate 21. A Cr evaporated layer 25 and an Au evaporated layer 26 are formed onto the surface. The layer 26 is patterned in the direction that crosses at right angles with the stripes 24. A layer 27 is plated thickly with Au. An electrode metallic layer 29 is formed onto the back of the substrate 21, and beltlike metallic layers 30 are shaped through patterning. The substrate 21 and the layer 22 are mesa-etched while using the layers 30 as masks. Layers 25, 27, 28 are cut, and the rectangular laser diodes are formed. The layers 30, beltlike semiconductor layers 31 and the layer 25 are cloven between the layers 27, 28. |
