| 摘要 |
PURPOSE:To perform stable sputtering at high speeds by disposing two targets in parallel by facing the surfaces to be sputtered each other, applying magnetic fields perpendicularly to the surfaces of the targets and applying high frequencies to the two targets. CONSTITUTION:Two targets 3, 3' are disposed in parallel by facing the surfaces 31, 31' to be sputtered each other. The targets are so constituted that magnetic fields H are applied perpendicularly to the surfaces 31, 31' and high frequencies are applied to the two targets 3, 3'. The high frequencies are applied by high frequency power sources 7, 7' connected to the two targets 3, 3'. The power sources 7, 7' which permit control of phases are used, so that the phases of the high frequencies to be applied to both targets 3, 3' are matched. |
