| 摘要 |
PURPOSE:To obtain the semiconductor having excellent voltage-current characteristics by a raw material of comparatively low purity by mixing Cu, Si and Te at a ratio within a specific range. CONSTITUTION:The fine powder of Cu, Si and Te each having 99.999%, 99.99999% and 99.999% purity respectively are weighed so that the weight at upper limits is 90%, weight % at lower limits 5% and these weight sum 100% in all three elements. The raw materials of these Cu, Si and Te are mixed, filled into a baking crucible and baked under predetermined conditions, and a crystal is grown. Accordingly, the semiconductor obtained indicates extremely excellent voltage-current characteristics by employing the raw materials of comparatively low purity. |
