Semiconductor vapor phase growing apparatus.

摘要

In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates suppotted by a rotary support disposed in a reaction furnace and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON.OFF controlling the valves according to a predetermined program. The control device comprises a memory region for storing a process program group including a group of process programs including informations regarding a time for designating a process of vapor phase growth in the reaction furnace, gases utilized, flow quantity thereof and furnace temperature, and a system program that decodes the program group for producing control signals for the valves. According to this invention, semiconductor layers can be formed on semiconductor wafers by vapor phase growing technique under control of a computer, and at a high speed without causing slip in the wafers.