Mask for imaging a pattern of a photoresist layer, method of making said mask, and use thereof in a photolithographic process

摘要

The invention relates to a mask for imaging a pattern on a photoresist layer, with at least one alignment mark, to a method of making such a mask, and use of these masks for making semiconductor components. The masks made in accordance with the invention are obtained in such manner that in their production the patterns of adjacent chip fields are imaged to the effect that they overlap in their border lines containing the alignment marks. The process produces alignment marks representing the mean of at least two alignment marks of adjacent chip fields. By means of the above specified manufacturing process, the opto-mechanical imaging defects observed during mask production can be substantially eliminated. The masks as disclosed by the invention can be aligned in semiconductor processes with more precision than prior art masks.