| 摘要 |
PURPOSE:To reduce overlap area of gate electrode, source and drain regions by diffusing source and drain after forming an insulating film at the surface of gate electrode. CONSTITUTION:An oxide film 10 for separating elements, gate oxide film 11 and gate electrode 12 are formed on a P type substrate 9. An oxide film 13 is formed on the substrate 9 by the oxidation process, and a thick oxide film 14 is formed on an electrode 12. When etching is carried out, the surface of electrode 12 is covered with a film 15. Here, a source region 16 and drain region 17 are formed, and an oxide film 18 is formed in succession. An electrode wiring 19 for source drain extending over said film is formed and a protective oxide film 20 is also formed. Thereby a MIS type semiconductor can be obtained. |
