| 摘要 |
PURPOSE:To form two kinds of Schottky barrier diodes on a single chip by forming a second insulating film in different dimensions at a pair of apertures provided on a first insulating film and thereby forming a barrier metal pattern. CONSTITUTION:A pair of apertures 31, 32 are provided on an insulating film 2 formed on a substrate 1. Then, after a metal silicide layer 4 is formed on the surface region of substrate 1 exposed from said apertures, a second insulating film 5 is formed on the entire part. Then, the insulating film 5 which is larger than the first aperture 31 and that which is smaller than the second aperture 32 are respectively etched from these areas and thereby an aperture 6 is provided. A barrier metal pattern 7 is formed and thereby two kinds of Schottky barrier diodes are formed. |
