| 摘要 |
<p>A transistor device which is suitable for a high-frequency and high-power transistor is disclosed. The transistor device comprises a first ceramic plate and a second ceramic plate mounted on the first ceramic plate. The first ceramic plate is provided with a transistor chip element and also emitter, base and collector leads which are formed thereon, each of these leads being connected to a corresponding emitter, base and collector area of the transistor chip element, respectively. The second ceramic plate is provided with emitter, base and collector guide leads formed thereon. These emitter, base and collector guide leads have emitter, base and collector lead terminals, respectively. The emitter, base and collector leads of the first ceramic plate are electrically connected with the corresponding emitter, base and collector guide leads of the second ceramic plate, respectively, by means of respective longitudinal conductive paths formed along and on the side surface of the second ceramic plate.</p> |
