| 摘要 |
PURPOSE:To contrive a large improvement of drawn image pattern dimensions, by setting and keeping the ratio of the exposure amount due to the primary electron to that due to the re-reflected electron at a specific value or less. CONSTITUTION:The primary incident electron 4 is reflected, based on the cosine law, from a substrate 1 to a direction making an angle theta with the beam axis. The reflected electron 5 thereof is next reflected on the rear surface of the upper structural body 2, then advances to a direction making an angle theta with the normal of the structural body 2, and approximates when incidence is into the point 7 on the substrate 1. The rear surface of the structural body 2 is kept apart from the substrate 1, or the rear surface thereof is processed, or a substance satisfying the Formula described hereunder is deposited thereon, in order that the ratio of the exposed amount Qo being received by the substrate 1 due to the incidence of the electron beam 4 to the exposed amount QR being received by the substrate 1 due to the electron beam which is re-reflected on the rear surface of the structural body 2 becomes QR/Qo<=0.1. Thus, the pattern dimensional error due to the influence by the re-reflected electron can be reduced to an almost negligible value and drawn image patterns of good accuracy can be obtained. |
