| 摘要 |
PURPOSE:To shorten turn-OFF time by exposing the intermediate junction of a thyristor region and the junction of a diode region to the same main surface and making both junctions oppose to each other. CONSTITUTION:A first base layer 2 is exposed to the main surface 11, and the thyristor region and the second base layer 3 of the diode region are divided. In such structure, when reverse bias is applied between a gate G and a cathode K, resistance among gate electrodes 8 and the electrode 9 of the diode region becomes infinite because there are two junctions J2 among them, and currents flowing among the electrodes 8 and the electrode 9 can be brought to 0. That is, only currnts by residual carriers can be swept out effectively by reverse bias between G and K, thus largely improving turn-OFF characteristics. |
