| 摘要 |
PURPOSE:To form a uniform SiC film, by carrying out the step of forming the SiC film and the step of changing the holding positions of a grahite plate alternately in one period of increasing and reducing the temperature without repeating the steps of increasing and reducing the temperature in a furnace. CONSTITUTION:A graphite plate 4 is placed on supporting rods 5, and H2 gas is introduced through an introductory pipe 3 into a furnace (A). An output is simultaneously applied to a high-frequency coil 1 to heat the graphite plate 4. A gas containing silicon and C is introduced though the introductory pipe 3 into the furnace (A) to form an SiC film 8 on the graphite plate 4. After completing the first formation of the SiC film, H2 gas is introduced through the introductory pipe 3 to expel the gas containing the silicon and C. A quartz rotating cylinder 7 is then raised to lift the graphite plate 4 to such a position as not to be in contact with the supporting rods 5. The quartz rotating cylinder 7 is then rotated to a given angle, lowered again and placed on the supporting rods 5 to carry out the step of changing the holding positions. The second step of forming the SiC film is then carried out in the same way as in the first step. |
