发明名称 HYBRID IC
摘要 <p>PURPOSE:To enhance integration density and to improve heat-radiating capability by a method wherein a lead on a substrate rear surface is connected with an external lead penetrating the substrate before they are resin-sealed together with the substrate. CONSTITUTION:Provided on the rear side of a substrate 1 is a resin-sealed heavy duty semiconductor device 6 with a lead 7 leading out to be directly connected to an external lead 5. The lead 5 penetrates the substrate 1 via an opening and is fixed with solder. A junction-protecting resin coating is applied to the front surface of the substrate 1. The entirety is accommodated in a resin case 8 full of liquid epoxy resin 9. Heat treatment is performed for the setting of the epoxy resin 9.</p>
申请公布号 JPS58123740(A) 申请公布日期 1983.07.23
申请号 JP19820005707 申请日期 1982.01.18
申请人 FUJITSU KK 发明人 NARAMOTO TAKEHISA
分类号 H01L23/34;H01L25/16;H05K3/28;H05K3/34 主分类号 H01L23/34
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