| 摘要 |
PURPOSE:To inhibit the extension of a depletion layer, and to manufacture the planar type semiconductor device easily by forming an impurity region having impurity concentration higher than a semiconductor layer onto the semiconductor layer formed onto a semi-insulating substrate. CONSTITUTION:An n type GaAs layer 9 formed onto the semi-insulating substrate 8 is doped, and the impurity region 10 having impurity concentration higher than the layer 9 is formed. An anode 12 and a cathode 13 are formed in the space width X of 0.4-0.5mum through an ion implantation method while using a grid electrode 11 shaped onto the region 10 as a mask. The surface is coated with a protective film for thermally treating silicon dioxide, etc., and thermally treated, and the protective film is removed. Then an anode electrode 15 and a cathode electrode 16 are formed. |
