FET AND METHOD FOR MANUFACTURING SUCH

摘要

A field effect transistor and method of making the same are disclosed. A thick mesa (17) of dielectric material is grown on a semiconductor substrate (10) and two or more layers (20a, b; 28a, b) of polycrystalline silicon grown on the vertical sides of the mesa (17) serve a masking function to define the gate region of the transistor with high accuracy. The mesa (17) and the two or more polycrystalline layers (20a, b; 28a, b) remain in the final device.