| 摘要 |
PURPOSE:To reduce Ic (collector current) dependability of hFE by dividing a transistor into numerous number more than two and automatically increasing the number of the transistors which sequentially operate in response to the level of Ic. CONSTITUTION:After collector layers 11, 12 and a base layer 13 are formed, an emitter layer is divided into two regions, and the first and second emitter layers 18, 14 are formed by selectively diffusing doner impurity for auxiliary and main transistors Q1 and Q2. Then, auxiliary transistor Q1 and main transistor Q2 ae shortcircuited at the collectors and emitters with common electrodes by depositing collector electrodes 15, emitter electrodes 16 and base electrodes 17, the transistor Q1 is simultaneously disposed between the base electrode and the transistor Q2, and an insulating film 19 is formed to prevent the base layer 13 from shortcircuiting to the emitter electrode 16. |
