| 摘要 |
PURPOSE:To detect a crystal defect effectively by a method wherein a pair of probes are pressure-contacted onto the wafer surface of crystal, currents flowed between the probes are measured, the operation is executed extending over the whole surface of the wafer surface and the state of distribution of currents is obtained. CONSTITUTION:One surface of a cut-wafer is brought to a specular state through chemical-polishing, the probes 3, which are made of tungsten and plated with gold, are used and pressed and contacted lightly onto the surface of the cut-wafer, the voltage of a DC power supply 5 is increased slowly, and currents IL flowed between the probes 3 are measured when voltage reaches some value such as 1,000V. The operation is executed along three directions of crystallographic directions in a face on the wafer surface, the change of currents IL in the diametrical direction of the wafer is measured, a transfer pit is detected through chemical etching, and the change of transfer density EPD in the three directions is obtained. |
