| 摘要 |
PURPOSE:To increase the adherence between a lead frame and synthetic resin as well as to improve the dampproof property of the titled semiconductor device by a method wherein a groove is provided on the front and back sides of the lead located inside an IC lead frame. CONSTITUTION:The lead frame 1 is usually rolled out from the material such as Kovar 42 alloy, copper, iron and the like, and a desired lead frame can be obtained by performig a press-punching or an etching. At this time, grooves 2 and 3 can be obtained by protruding the station 1 of a continuous molding mold from the direction of both surfaces by applying pressure using a coma and by preforming a press-working. Also, on the lead frame 1, a partial gold or silver plating is performed in the desired thickness at the point part of an island part 4 and the point part of an inner lead 11 for installation of a semiconductor element 5. Subsequently, a die bonding is performed on the semiconductor element 5 using an eutectic alloy, a bonding agent or solder, and also a wire bonding 6 is performed using a gold or aluminum wire. Then, a sealing is performed using synthetic resin, epoxy resin and the like, and after a lead working has been performed, a solder processing is conducted, electric characteristics are inspected, and lartly, the semiconductor device is completed. |
