发明名称 MANUFACTURE OF SEMICONDUCTOR CRYSTAL AND DEVICE THEREOF
摘要 PURPOSE:To unify a material solution, and to form epitaxial growth layers having uniform composition and thickness by a method wherein a cover is transferred prior to make the material solution and semiconductor substrates to come in contact mutually, and a protruding part provided on the cover is made to stir the material solution. CONSTITUTION:Sliders 2, 21, 22 are laminated on a base 1 as to make penetraing holes 4 to coincide mutually. At the concave parts 3 of the other sliders 21, 22 excluding the slider 2, the semiconductor substrates 5 are accommodated, and the cover 7 is put on the slider 2 on the uppermost stage. After the temperature is risen up to the prescribed temperature, by making the cover 7 to transfer in the right and left direction by 5 times or more, the protruding part 71 transfers in the material solution 6 stir, and uniform composition is formed. After then, the sliders 2, 21 of the odd-numbered order from the upper part are transferred, and after the solution 6 is made to come in contact with the substrates 5, by cooling the substrates, the epitaxial growth layers are formed on the substrates 5.
申请公布号 JPS58119633(A) 申请公布日期 1983.07.16
申请号 JP19820003222 申请日期 1982.01.11
申请人 SUMITOMO DENKI KOGYO KK 发明人 SASAYA YUKIHIRO;ISHIHARA TOYOHIDE;IGUCHI SHINICHI
分类号 H01L21/208;(IPC1-7):01L21/208 主分类号 H01L21/208
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