发明名称 MANUFACTURE OF PHOTOVOLTAIC ELEMENT
摘要 PURPOSE:To obtain a high conversion efficiency by a method wherein, when a sintered film of CdS or compound semiconductor containing it is formed on a supporting substrate,and further theron slurry wherein Cd and Te powders are mixed with caking agent is screen-printed, the mol ratio of the Cd and Te powders is specified. CONSTITUTION:On a glass substrate 1, the sintered film 2 of CdS or compound semiconductor containing it is formed, then, thereon slurry wherein Cd and Te powders are mixed with propylene glycol the caking agent is screen-printed, and is sintered in an inactive atmosphere such as N2 at approx. 690 deg.C for 20min resulting in the formation of a CdTe sintered film 3. Next, an ohmic electrode 6 is provided thereon via a carbon film 4, then a lead wire 7 is mounted, and, at the exposed end part of the film 2, an electrode 5 is adhered, then a lead wire 7 is led out. In this constitution, the mol ratio of Cd and Te in the film 3 is prescribed at 1.01/1-1.10/1.
申请公布号 JPS58118168(A) 申请公布日期 1983.07.14
申请号 JP19820000627 申请日期 1982.01.07
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 NAKANO AKIHIKO;MATSUMOTO HITOSHI;UDA HIROSHI;KOMATSU YASUMASA;IKEGAMI SEIJI
分类号 H01L31/04;H01L31/18 主分类号 H01L31/04
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