| 摘要 |
The pressure transducer includes a single crystal semiconductor chip (1) having a cavity (3) formed in one surface to define a diaphragm region, a tube (5) to communicate pressure to the cavity is bonded to the chip, pressure measuring sensors (13, 14, 17, 18) are disposed on the chip in the diaphragm region and additional pressure-responsive sensors (23, 24, 27, 28) are disposed on the chip outside the diaphragm region to provide a signal for compensating for zero shift temperature and pressure induced signals generated by the measuring sensors. |
