| 发明名称 |
METHOD TO FABRICATE FINFET SENSORS, IN PARTICULAR, FINFET SENSORS FOR IONIC, CHEMICAL AND BIOLOGICAL APPLICATIONS ON SI-BULK |
| 摘要 |
The present invention relates to a method of producing a FinFET sensor device comprising the steps of:
providing a silicon substrate;etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surface of the silicon substrate;depositing a spacer layer on the at least one Fin structure;anisotropically etching a section of the spacer layer to expose the underlying silicon;isotropic etching of the exposed silicon surrounding the at least one Fin structure; andcarrying out oxidation of the silicon surrounding the at least one Fin structure to produce a Fin structure of silicon inside the at least one Fin structure.;The present invention also relates to FinFET sensor devices produced by the above method. |
| 申请公布号 |
US2015268189(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201414219261 |
申请日期 |
2014.03.19 |
| 申请人 |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) |
发明人 |
RIGANTE Sara;IONESCU Adrian Mihai |
| 分类号 |
G01N27/414;H01L29/78;H01L21/8234;H01L29/16;H01L21/306;H01L21/02;H01L29/66;H01L27/088 |
主分类号 |
G01N27/414 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of producing a FinFET sensor device comprising the steps of:
providing a bulk silicon substrate; etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surface of the silicon substrate; depositing a spacer layer on the at least one Fin structure; anisotropically etching a section of the spacer layer to expose the underlying silicon; isotropic etching of the exposed silicon surrounding the at least one Fin structure; and carrying out oxidation of the silicon surrounding the at least one Fin structure to produce a Fin structure of silicon inside the at least one Fin structure. |
| 地址 |
Lausanne CH |
