| 摘要 |
PURPOSE:To realize growth of uniform film by arranging a holding means so that the main suface of wafer is faced downward and by locating a gas injecting means at the lower side of the holding means. CONSTITUTION:A susceptor 12 is closely fixed to a heater block 10 and wafers 14 are held by said susceptor with the main surfaces 18 faced downward by means of hooks 16. At the lower side of susceptor 12, a rail 50 is laid in the arranging direction of wafers 14 and a base 54 is put on the rail 50. At the upper part of base 54, a nozzle 56 is provided with the injection port 58 faced upward and a gas for growth of film is supplied through a pipe 60. In the case of this invention, gas is injected right upward to wafers and therefore a crystal powder formed in the vicinity of injection port of nozzle 56 drops downward and is hardly adhered to the main surface 18 of wafer 14. |
