| 摘要 |
<p>PURPOSE:To obtain a fuse blown type programmable read-only memory which allows a cut position of a polycrystalline silicon layer due to laser irradiation is confirmed visually and easily. CONSTITUTION:The fuse part of this invented fuse blown type programmable read-only memory is formed on a silicon single-crystal substrate 1 where circuit elements such as a bipolar transistor, etc., are formed. In a silicon dioxide layer 2 on the silicon substrate 1, two recessed parts 3 and 4 are formed and a polycrystalline silicone layer 5 is formed over the entire surface by a chemical vapor-phase growing method. A poly crystalline silicon layer part 6 connecting the recessed parts 3 and 4 together flows into the recessed parts 3 and 4 by laser irradiation at need to form a cavity 11, so that the polycrystal silicon layer 5 is disconnected between the recessed parts 3 and 4.</p> |
