| 摘要 |
PURPOSE:To enable to completely enclose a current in an active layer formed in a groove by forming the groove on a semi-insulating substrate and disposing the active layer in the groove. CONSTITUTION:A V-shaped groove is formed on a semi-insulating InP substrate 10. A p type InP clad layer 11, an InGaAsP active layer 12 and an n type InP clad layer are sequentially grown in the groove. Then, a p type conductive regin 14 is formed on the back side of the substrate 10. Thereafter, an n type electrode 15 is provided at the layer 13 side, and a p type electrode 16 is provided at the substrate 10 side. When thus constructed, a current can be completely confined in the layer 12 formed in the groove, thereby eliminating the reactive current. |
