SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE:To suppress the variation in the output light of a semiconductor light emitting device by forming a light absorbing layer between a semiconductor substrate and an electrode, thereby preventing the reflection of leaking light from a light emitting region. CONSTITUTION:After a p type InP layer 11 and a p type InGaAsP light absorbing layer 12 are epitaxially formed in liquid phase on an n type InP (100) substrate 10, it is anisotropically etched with HCl, thereby forming a V-shaped groove 13, and the end is slightly introduced into the substrate. Then, an n type InP 14 is laminated in approx. 1mum thick, non-added InGaAsP active layer 15 is laminated in approx. 0.2mum thick, a p type InP layer 16 is further laminated in approx. 0.7mum thick on the flat part, a p type InGaAsP layer 17 is laminated in approx. 1mum thick, the active layer 15 is formed in the groove, the surface of the layer 16 is formed to be flat, electrodes 18 of Ti-Pt-Au are formed, the back surface of the substrate is polished to reduce the entire thickness to approx. 100mum, an electrode 19 of Au-Ge-Ni is attached, and is cleaved, thereby forming chips. According to this configuration, the reflected light (9) by the electrode (4) of the leakage light from the light emitting region is absorbed by the layer 12, thereby eliminating the mutual action with main emitted light. Accordingly, the disorder 8 of the shoulder of the energy distribution 7 can be removed, and the variation of the output light based on this can be removed.