| 摘要 |
PURPOSE:To expose a single crystalline region insulated and isolated by coating a window section formed to a thick insulating film with poly Si, irradiating a laser and removing the SiO2 film of the surface also including a SiO2 film on the insulating film. CONSTITUTION:The windows 13 with 20mum one sides are formed selectively to SiO2 12 with 1mum thickness on a Si substrate 11, and a thin-film 14 with 0.1mum is left on the bottom. Poly Si 15 is deposited in approximately 0.4mum thickness, and the film 15 is melted through scan by a laser spot, flowed into the windows 13 and coagulated, and changed into single crystals 16. Thin-films 17, which have not more than 0.1mum thickness and are turned into single crystals, often remain on SiO2 12 at that time. The thin-films 17 are changed into SiO2 completely through thermal oxidation while SiO2 18 is also formed onto the single crystalline regions 16. When SiO2 18 is removed through etching, complete insulated and isolated regions surrounded by the films 12 and 14 are completed, the substrate, which approximates to a SOS element, the speed of operation thereof is fast and which is suitable for a device, power consumption thereof is low, is obtained, and cost is reduced because sapphire is not used. |
