| 摘要 |
PURPOSE:To extend the width of a V-shaped N<+> buried layer without degrading the degree of integration, and to reduce collector resistance without influencing effects on others by forming the buried layer near the surface of a P type Si substrate, the surface thereof is (100). CONSTITUTION:A V-shaped groove 12 is formed to the (100) face of the P type Si substrate 1 through anisotropic etching, and Sb is introduced and the N<+> layer 13 is formed. An N epitaxial layer 14 is stacked by using SiH2Cl2 gas, and an approximately flat surface is shaped. The N layer 14 is isolated by a P<+> layer, a P base 16 is formed just above the buried layer 13, and an N emitter 17 is manufactured. Since the buried layer 13 takes V shape, it is formed widely in the same area as conventional devices, and the resistance value of the N collector layer 14 can be lowered. An N<+> collector extracting layer 18 is formed, and each electrode is attached. Accordingly, a buried region can be extended without expanding the occupied area of a transistor, etc., and collector resistance can be reduced. |
