| 摘要 |
PURPOSE:To reduce the generation of transfer by forming an Si3N4 film into the element forming region of an Si substrate while also forming an Si3N4 film onto the whole back and selectively oxidizing the Si3N4 film on the back. CONSTITUTION:The Si3N4 film 3 with approximately 2,000Angstrom thickness is formed onto the whole back of the Si substrate 1, the Si3N4 film 2 with approximately 1,000Angstrom thickness is shaped onto the surface, and the Si3N4 film except the element forming region is removed. When an insulated and isolated layer is formed through wet oxidation, compressive stress in the surface of the Si substrate generated by the film 2 is denied by tensile stress on the back generated by the film 3 of the back, tensile stress is applied by the difference of film thickness and areas formed, and stress is made less than conventional devices up to 10<6>dyne/cm<2> or less. Transfer is difficult to enter in the device under the state of tensile stress, and transfer density can be reduced up to 50cm<-2> or less and transfer depth up to 5,000Angstrom or less according to the constitution. |
