发明名称 |
DYNAMIC SEMICONDUCTOR MEMORY CELL AND METHOD FOR ITS MANUFACTURE |
摘要 |
<p>A dynamic semiconductor memory cell increases integration density in that the transfer gate has minimum dimensions and a smaller transfer channel length. The threshold voltage of the field effect transistor is largely independent of fluctuations of the substrate bias voltage and the capacitance of the memory capacitor is increased with respect to the predetermined semiconductor surface in comparison to traditional memory cells. The method of manufacture is also disclosed.</p> |
申请公布号 |
CA1149512(A) |
申请公布日期 |
1983.07.05 |
申请号 |
CA19800354835 |
申请日期 |
1980.06.26 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
TIHANYI, JENOE |
分类号 |
H01L27/10;G11C11/404;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):G11C11/40 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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