| 摘要 |
PURPOSE:To provide a silicon crystal which provides semiconductor devices having excellent electrical characteristics by specifying the concn. of oxygen to be contained therein. CONSTITUTION:The concn. of oxygen contained in a silicon crystal is set at (1.6+ or -0.1)X10<3>cm<-3>. The semiconductor device using the substrate produced by slicing this silicon crystal into a wafer has less crystal defects in element forming areas and improves the electrical characteristics of semiconductor devices, for example, a longer time for holding storage of storage devices. |
