| 摘要 |
PURPOSE:To automatically control exposure operation, and to enhance yield of a product, by controlling the exposure operation with a computer, regulating exposure energy incident on the line edges of a resist to form width of the resist lines high precision and fidelity to a designed value. CONSTITUTION:A silicon wafer is coated with a photoresist uniformly, irradiated with a uniform light, and developed so as to regulate exposure by utilizing relationship between a critical exposure energy making residual resist thickness zero, and exposure energy incident on the line edges of the resist. The critical exposure energy from a measuring device 16 and width of the line edges from a measuring device 17 are introduced to a computer 20, and dependency of critical exposure energy upon the relative light intensity of the line edges is obtained. A quantity of mask pattern image defocused measured with a defocused quantity measuring device 19 is fed to the computer 20 to execute necessary calculation, and the obtained exposure energy is fed to an exposure time controller 15 to control it. |
