| 摘要 |
PURPOSE:To form required mixed thin films having uniform component compsn. over the entire surface of a substrate, by placing the substrate to face target plates partially within the range where the respective targets exist while controlling the electric currents and voltages of respective sputtering sources separately thereby sputtering the targets. CONSTITUTION:Target plates 13, 13' of respectively different components are set to two pieces of sputtering sources 5, 5'. On the other hand, a substrate 14 of required material quality is set on a substrate holder 6, and the holder 6 is moved upward and downward to maintain the substrate 14 and the plates 13, 13' at required spacings. After the inside of a vacuum vessel 1 is evacuated, an inert gas such as Ar is sealed therein. Shutters 9 are rotated and are removed from the lower sides of the plates 13, 13'. The electric currents and voltages of the sources 5, 5' are controlled according to the respective plates 13, 13' and the substrate 14 is rotated integrally with a water-cooled reverse sputtering table 7 under rotation 8. Thereafter, high voltages are applied between the substrates 14 and the plates 13, 13' by the sources 5, 5' to sputter the plates 13, 13', whereby mixed thin films are formed on the rotating substrate 14 by mixing the required compsns. of the components of the plates 13, 13'. |
