| 摘要 |
PURPOSE:To obtain a structure of a light receiving element which unnecessitates melt back, by providing an ion implanted region of the same conductive type as a light absorption layer in the light absorption layer under a light receiving part in a light receiving element wherein a light receiving part and a guard ring region are arranged in an InP layer provided on the light absorption layer. CONSTITUTION:On an N<+> InP substrate 12, an N<-> type InP buffer layer 13, and an N<-> type InGaAsP light absorption layer 14 are successively grown by a liquid epitaxial growing method. Next, a photo resist layer is formed on the light absorption layer 14 except for a buried region formed by an ion implantation, and, with this layer as a mask, an Si ion implanted region 16 is formed. Then, on the light absorption layer 14, an N<-> type InP window layer 17 is liquid-epitaxial-grown. Thereat, since the InP window layer 17 is grown on the light absorption layer 14, an InP layer with good crystallinity is grown even without the melt back of the light absorption layer 14. After Be is implanted, a guard ring region 18 is formed, and a light receiving part 19 is formed by a Cd selective diffusion method. After an Si3N4 film 20 is formed on the layer 17, a window opening for a P side electrode is performed, and then a P side and N side electrode 22 are formed by using AuZn and AuGe. |
