| 摘要 |
PURPOSE:To flatten the surface of an epitaxial layer, by providing a member having small holes or slits in a through hole in a sliding member having a liquid well comprising the through hole, and contacting only the liquid phase component which has passed said member with a substrate. CONSTITUTION:The plate shaped member 15 of cabon in which many small holes are arranged, is provided in the sliding member 11 so as to contact with an inner wall 13 of the liquid well 12 comprising the square through hole. A material Hg1-xDdxTe of a crystal layer to be formed on the substrate is provided on said plate shaped material 15, and it is mounted on a supporting table. After the device is introduced into a reacting tube filled with an H2 gas atmosphere, it is heated in a furnace. Then, the material is diffused, and only the liquid phase component, which does not include sludge and crystalized particles, falls to the lower part through the small holes 14. Under this state, the sliding member is moved in order to position the liquid well on the substrate, and the crystal layer is epitaxially grown by temperature gradient method. |
