发明名称 MOSFET DEVICE
摘要 The polygonal shaped source members are preferably hexagonal. Each polygonal region has a relatively deep central portion(122, 123) and an outer shallow shelf portion(124, 125). The shelf portion generally underlies an annular source region(126, 127). The deep central portion underlies an aluminum conductive electrode(150) and is sufficiently deep that it will not be fully penetrated by aluminum spiking.
申请公布号 KR830001246(B1) 申请公布日期 1983.06.27
申请号 KR19790003527 申请日期 1979.10.13
申请人 INTERNATIONAL RECTIFIER CORP. 发明人 LIDOW ALEXANDER;HERMAN THOMAS;RUMENNIK VLADIMIR
分类号 H01L29/76;H01L29/78;(IPC1-7):H01L29/76 主分类号 H01L29/76
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