| 摘要 |
PURPOSE:To improve recording and reproducing characteristics and to prevent the deterioration of a thin magnetic film layer by incorporating nitrogen into an intermediate layer formed of silicon nitride in such a manner that the nitrogen content on the substrate side is larger than the nitrogen content on the thin magnetic film layer side. CONSTITUTION:The intermediate layer 3 is formed of the silicon nitride and the N/Si atomic ratio in the silicon nitride intermediate layer 3 is 0.8-1.3, more preferably 0.9-1.1 in average over the entire part of the layer. The prescribed nitrogen concn. distribution in which the nitrogen content on the substrate side in the intermediate layer 3 is larger than the nitrogen content on the thin magnetic film layer 4 side exists in the thickness direction of the intermediate layer 3. The recording and reproducing characteristics are thereby improved and the deterioration of the thin magnetic film layer with age is lessened.
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