| 摘要 |
<p>In a process for forming a complementary semiconductor device in a semiconductor substrate having first and second active regions therein a thin gate oxide layer (27) is formed on the substrate (10) and a polysilicon layer (31) is formed on the gate oxide layer (27). The polysilicon layer (31) is then doped to the desired level with n-type impurities, whereafter a relatively thick mask oxide layer (32) is formed on the polysilicon layer (31). Polysilicon gate electrodes (34, 35) and interconnecting conductors (36) are defined and etched from the doped polysilicon layer (31) leaving portions (32A, 32B) of the mask oxide layer remaining on the gate electrodes (34, 35). The first and second active regions are then alternately masked, while effecting ion implantation of dopants to form source and drain regions (38, 39 and 41, 42). During the ion implantation the mask portions (32A, 32B) protect the polysilicon gate electrodes (34, 35) from further doping.</p> |
