| 摘要 |
PURPOSE:To obtain a photocell which has simple element structure and which can be readily manufactured in high efficiency by forming a surface inverting layer on the surface of a compound semiconductor substrate and forming a P-N junction between the layer and the substrate. CONSTITUTION:An N type surface inverting layer 12 is naturally formed on the front and side surfaces of a III-V group or II-VI group compound semiconductor, such as P type InAs substrate 11, thereby forming a P-N junction 13. A back surface electrode 16 is covered via a P<+> type layer 15 on the back surface of the substrate 11, and a lattice-shaped surface electrode 14 is formed on the surface of the layer 12. In this manner, the steps for obtaining a P-N junction such as thermal diffusion, ion implantation or epitaxial growth or the like are omitted, thereby obtaining a photocell which has high collecting yield of the carrier in the surface layer and simple structure. |
