| 摘要 |
PURPOSE:To shorten the manufacturing process of the semiconductor device by a method wherein a layer of minute particles consisting of a metal, an alloy or a mixture thereof is arranged on a substrate, a laser beam is irradiated thereto, and the layer is fusion welded to form metal wirings. CONSTITUTION:The layer 3 of the minute particles consisting of the metal of Si, Al, Ti, Mo, Fe, Cu, etc., or the mixture thereof is formed on the whole surface of the semiconductor substrate 1, and the laser beam matched to the aimed wiring shape is irradiated 4 onto the minute particle layer 3, or the laser beam narrowed down to a minute spot is irradiated 4 scanning in the wiring shape. The minute particles irradiated 4 with the laser beam are molten to be solidified to form the wiring pattern 5. The remaining minute particles adhered at the circumference are removed by ultrasonic cleaning, etc., to complete the desired product. |
