| 摘要 |
Disclosed is a bipolar integrated circuit, comprising a first wiring layer (4) consisting of polycrystalline silicon containing a high concentration of an impurity and formed on a first insulation layer covering a semiconductor substrate having a plurality of I<2>L elements formed therein, and a second wiring layer (7) consisting of a metal and formed on a second insulation layer covering the first wiring layer (4), said second wiring layer (7) being connected to the I<2>L elements and to the first wiring layer (4) through contact holes. The product between the injector current per gate of the I<2>L element and the resistance of the first wiring layer (4) is controlled to be at most 0.3V. <IMAGE> |
